PBSS5350T,215

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PBSS5350T,215 datasheet

Маркировка

PBSS5350T,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS5350T,215 Collector- Emitter Voltage Vceo Max: - 50 V Configuration: Single Continuous Collector Current: - 2 A Current - Collector (ic) (max): 2A Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 200 Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 2V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949801 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 5 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 540mW Power Dissipation: 300 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 390mV @ 300mA, 3A Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: - 50 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 DC Current Gain hFE Max: 200 at 100 mA at 2 V Maximum Power Dissipation: 300 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS5350T T/R Other Names: 568-4169-2, 934056605215, PBSS5350T T/R
Количество страниц

10 шт.
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